Gallium Nitride Photoconductive Detectors
نویسندگان
چکیده
Since 1994, the Applied Physics Laboratory has been collaborating with NASA Goddard Space Flight Center to develop photodetectors based on gallium nitride and aluminum gallium nitride material produced in the Milton S. Eisenhower Research and Technology Development Center. This article describes the results of our collaboration and highlights the development of gallium nitride photodetectors with responsivities and response times that are the best reported to date. These findings, obtained with simple structures, are of sufficient quality to launch the technology toward the development of practical devices with a variety of potential applications in future NASA missions. (
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